PART |
Description |
Maker |
NTMFS4841NT1G |
Power MOSFET 30 V, 57 A, Single N-Channel, SO-8 FL; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 8.3 A, 30 V, 0.0114 ohm, N-CHANNEL, Si, POWER, MOSFET
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ON Semiconductor
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IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. VISHAY INTERTECHNOLOGY INC
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IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET 14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET 4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET 9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET 2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET 3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET 5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET 13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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Bourns, Inc. Molex, Inc. VISHAY INTERTECHNOLOGY INC
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STC05DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 5 A - 0.10 ohm
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STMICROELECTRONICS[STMicroelectronics]
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STC03DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 ohm
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STMICROELECTRONICS[STMicroelectronics]
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CCR1 CCR CCR1Z-1K2KI CCR1Z-1K8KI CCR1Z-1K5KI CCR1Z |
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 390 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 270 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 560 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2200 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 680 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 820 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 10000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2700 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 3300 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 220 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 330 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 470 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 22000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 12000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 18000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 15000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1500 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1800 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1200 ohm, SURFACE MOUNT Carbon Ceramic Resistors
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Welwyn Components, Ltd. Welwyn Components Limited TT Electronics / Welwyn
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STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm
|
ST Microelectronics
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2SK3218-01 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; BNC MALE TO SMA MALE; 50 OHM, RG196A/U COAX; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 40 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-CHANNEL SILICON POWER MOS-FET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
STFV3N150 STFW3N150 STP3N150 STW3N150 |
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH Power MOSFET N-channel 1500 V, 6 楼?, 2.5 A, PowerMESH垄芒 Power MOSFET
|
STMicroelectronics
|
HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 15A条(丁)|52AA 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C |
CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S) MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
HP4936DY FN4469 HP4936DYT |
5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率MOS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
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